Fifth International Workshop on Physical Chemistry of Wet Etching of Semiconductors PCWES
نویسنده
چکیده
SUMMARY Isotropic etching of silicon in HF based solutions is expected to be controlled by the diffusion of fluorine to the silicon surface. In order to gain quantitative understanding of the process we studied etching of Si in HF/HNO 3 /H 2 O via circular mask openings and compared the results with the theoretical expectations. The cavity edges due to etching under the mask were analyzed with a high precision by processing the optical microscope images. Dependence on the etching time and opening size was investigated. The time dependence was verified with 1% precision. Dependence on the opening size predicted theoretically is not fully supported by the experiment. There is a small (4%) but clearly observable deviation from the theory. A small anisotropy was observed in perfect agreement with the crystal orientation symmetry. The anisotropy becomes larger with the decrease of the opening size for (100) and (110) wafers.
منابع مشابه
Investigation of HF/H2O2 Concentration Effect on Structural and Antireflection Properties of Porous Silicon Prepared by Metal-Assisted Chemical Etching Process for Photovoltaic Applications
Porous silicon was successfully prepared using metal-assisted chemical etching method. The Effect of HF/H2O2 concentration in etching solution as an affecting parameter on the prepared porosity type and size was investigated. Field emission electron microscopy (FE-SEM) confirmed that all etched samples had porous structure and the sample which was immersed into HF/H2O2 withmolar ratio of 7/3.53...
متن کاملNanowires fine tunable fabrication by varying the concentration ratios, the etchant and the plating spices in metal-assisted chemical etching of silicon wafer.
The metal-assisted chemical etching (MACE) was used to synthesis silicon nanowires. The effect of etchant concentration, etching and chemical plating time and doping density on silicon nanowires length were investigated. It is held that the increasing of HF and H2O2 concentrations lead to etching rate increment and formation of wire-like structure. The results show that, the appropriate ratio o...
متن کاملLithography for enabling advances in integrated circuits and devices.
Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase ...
متن کاملWetting behavior of water on silicon carbide polar surfaces.
Technically important wide band-gap semiconductors such as GaN, AlN, ZnO and SiC are crystallized in polar structures. Taking SiC as an example, we investigate the effect of surface polarity on the wetting behavior by water using experiments and molecular dynamic simulations. It is found that the contact angle (CA) of deionized water on the carbon-face (C-face) is significantly larger than that...
متن کاملAnisotropic Dry Etching ( RIE ) for Micro and Nanogap Fabrication
The main objective of this research is to develop a micro and nanogap structure using dry anisotropic etching –Reactive Ion EtchingRIE. Amorphous silicon material is used in the micro and nanogap structure and gold as electrode. The fabrication processes of the micro and nanostructure are based on conventional photolithography, wet etching for the Al pattern and wet etching for a-Si pattern usi...
متن کامل